Rutherford backscattering and secondary ion mass spectrometry studies of erbium implanted siliconGILLIN, W. P; ZHANG JINGPING; SEALY, B. J et al.Solid state communications. 1991, Vol 77, Num 12, pp 907-910, issn 0038-1098, 4 p.Article

A new laser pain threshold model detects a faster onset of action from a liquid formulation of 1 g paracetamol than an equivalent tablet formulationSUTTON, J. A; GILLIN, W. P; GRATTAN, T. J et al.British journal of clinical pharmacology. 2002, Vol 53, Num 1, pp 43-47, issn 0306-5251Article

Thermal interdiffusion in InGaAs/GaAs strained quantum wells as a function of doping densityGILLIN, W. P; HOMEWOOD, K. P; HOWARD, L. K et al.Superlattices and microstructures. 1991, Vol 9, Num 1, pp 39-42, issn 0749-6036, 4 p.Article

Abrupt p9é layers in GaAs by 200°C mercury implantationTANG, A. C. T; GARDNER, S. R; SEALY, B. J et al.Electronics Letters. 1989, Vol 25, Num 24, pp 1618-1620, issn 0013-5194, 3 p.Article

Characteristics of rare-earth element erbium implanted in siliconTANG, Y. S; HEASMAN, K. C; GILLIN, W. P et al.Applied physics letters. 1989, Vol 55, Num 5, pp 432-433, issn 0003-6951Article

Reactive formation of cobalt silicide on single-crystal silicon under rapid electron beam heatingMAHMOOD, F; AHMED, H; JEYNES, C et al.Applied surface science. 1992, Vol 59, Num 1, pp 55-62, issn 0169-4332Article

Low temperature magnetic field effects on the efficiency of aluminium tris(8-hydroxyquinoline) based organic light emitting diodes in the absence of magnetoresistanceSIJIE ZHANG; KREOUZIS, T; GILLIN, W. P et al.Synthetic metals. 2013, Vol 173, pp 46-50, issn 0379-6779, 5 p.Conference Paper

The effect of deuteration on organic magnetoresistanceROLFE, N. J; HEENEY, M; WYATT, P. B et al.Synthetic metals. 2011, Vol 161, Num 7-8, pp 608-612, issn 0379-6779, 5 p.Conference Paper

The effect of applied magnetic field on photocurrent generation in poly-3-hexylthiophene:[6,6] -phenyl C61-butyric acid methyl ester photovoltaic devicesSHAKYA, P; DESAI, P; KREOUZIS, T et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 45, issn 0953-8984, 452203.1-452203.4Article

Electroluminescence from ⁵D₀ → ⁷F_J and ⁵D₁ → ⁷F_J (J = 0-4) transitions with a europium complex as emitterYOUXUAN ZHENG; YONGHUI ZHOU; JIANGBO YU et al.Journal of physics. D, Applied physics (Print). 2004, Vol 37, Num 4, pp 531-534, issn 0022-3727, 4 p.Article

Interdiffusion in InGaAs/GaAs quantum well structures as a function of depthGILLIN, W. P; DUNSTAN, D. J; HOMEWOOD, K. P et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3782-3786, issn 0021-8979Article

Effect of thermal diffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum wellsGILLIN, W. P; PEYRE, H; CAMASSEL, J et al.Journal de physique. IV. 1993, Vol 3, Num 5, pp 291-294, issn 1155-4339Conference Paper

Thermal processing of GaAsSb/GaAs low-dimensional strained-layer structuresHOMEWOOD, K. P; GILLIN, W. P; PRITCHARD, R. E et al.Superlattices and microstructures. 1990, Vol 7, Num 4, pp 359-361, issn 0749-6036Article

Modelling of organic magnetoresistance as a function of temperature using the triplet polaron interactionSIJIE ZHANG; DREW, A. J; KREOUZIS, T et al.Synthetic metals. 2011, Vol 161, Num 7-8, pp 628-631, issn 0379-6779, 4 p.Conference Paper

Measurement of the size effect in the yield strength of nickel foilsMOREAU, P; RAULIC, M; P'NG, K. M. Y et al.Philosophical magazine letters. 2005, Vol 85, Num 7, pp 339-343, issn 0950-0839, 5 p.Article

Erbium in silicon-germanium quantum wellsNAVEED, A. T; HUDA, M. Q; EL-RAHMAN, K. F. A et al.Journal of luminescence. 1998, Vol 80, Num 1-4, pp 381-386, issn 0022-2313Conference Paper

Thermally induced change in the profile of GaAs/AlGaAs quantum wellsPEYRE, H; CAMASSEL, J; GILLIN, W. P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 332-336, issn 0921-5107Conference Paper

The effect of gallium implantation on the intermixing of InGaAs/GaAs strained quantum wellsGILLIN, W. P; BRADLEY, I. V; HOMEWOOD, K. P et al.Solid state communications. 1993, Vol 85, Num 3, pp 197-198, issn 0038-1098Article

The effects of ion implantation on the interdiffusion coefficients in In_xGa_1-xAs/GaAs quantum well structuresBRADLEY, I. V; GILLIN, W. P; HOMEWOOD, K. P et al.Journal of applied physics. 1993, Vol 73, Num 4, pp 1686-1692, issn 0021-8979Article

Vacancy controlled interdiffusion in III-V heterostructuresGILLIN, W. P; BRADLEY, I. V; RAO, S. S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 281-283, issn 0921-5107Conference Paper